Abstract

An approach is developed to model high-efficiency textured silicon solar cells. It uses a simple empirical formula to quantitatively describe the experimental external quantum efficiency in the long-wavelength part of the spectrum and hence to find the short-circuit current density as a function of base thickness. In addition to the usual recombination mechanisms in silicon, this approach takes into account the non-radiative trap-assisted exciton Auger recombination and recombination in the space-charge region. This approach allows to establish the photoconversion efficiency for arbitrary base thickness and doping level, and hence to optimize the cell performance with respect to these parameters.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call