Optimization of Temperature Dependence of Heteronanolaser Threshold Current with Account for the Thickness and Dielectric Properties of the Heterostructure Waveguide Nano-Layer Material

Abstract

An exact problem of the electromagnetic wave propagation in a multilayer heteronanostructure with complex values of the dielectric constant (permittivity) is solved. The contribution to the refractive index of an additive to the dielectric constant due to the injected carriers is taken into account. A heterostructure based on a nanosystem used for the manufacture of lasers in the range 0.94–1.14 μm is considered. The methods and approaches used are also applicable for optimizing multilayer structures based on other solid solutions and those with several quantum wells. Based on the calculations of the temperature dependence of the radiation characteristics of injection lasers based on heteronanostructures, it was shown that the anomalous behavior of the temperature dependence of the threshold current is associated with a weakening of the waveguide properties of their active region. In accordance with the calculation results, the heteronanotructures parameters of injection lasers were optimized with respect to the thickness and dielectric properties of the waveguide nanolayer material, which made it possible to significantly reduce the temperature dependence of their radiative characteristics.