Abstract
Growth, structural and electrical properties of perovskite type LaNiO3 thin film nanostructures using chemical solution deposition at annealing temperatures ranging from 550 to 800 °C has been optimized. Poly-vinyl alcohol was used as stabilizing agent in the precursor solutions. X-ray diffraction and AFM, respectively confirmed phase purity and nanostructured growth with mono dispersed crystallite distribution at processing temperature of 700 °C. Crystalline strain as low as 1 % was estimated from the XRD peaks; confirming relaxed and stable LNO crystalline structure deposited on quartz substrate. A systematic variation in the resistivity and carrier concentration with annealing temperatures were observed, revealing that 700 °C is an optimum temperature for a phase pure LNO films with smooth surface structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.