Abstract
Growth, structural and electrical properties of perovskite type LaNiO3 thin film nanostructures using chemical solution deposition at annealing temperatures ranging from 550 to 800 °C has been optimized. Poly-vinyl alcohol was used as stabilizing agent in the precursor solutions. X-ray diffraction and AFM, respectively confirmed phase purity and nanostructured growth with mono dispersed crystallite distribution at processing temperature of 700 °C. Crystalline strain as low as 1 % was estimated from the XRD peaks; confirming relaxed and stable LNO crystalline structure deposited on quartz substrate. A systematic variation in the resistivity and carrier concentration with annealing temperatures were observed, revealing that 700 °C is an optimum temperature for a phase pure LNO films with smooth surface structures.
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