Abstract
We have performed structural parameter optimizations of asymmetric ZnSe∕Zn1−xMnxSe multilayer structures in magnetic and electric fields to maximize the spin polarization of the electron tunnel current. The optimization procedure was carried out by simulated annealing, with target functions set to obtain the best possible spin-polarization properties within the chosen range of bias voltages. The performance of the optimized structure is predicted to exceed that of the existing spin-diode designs.
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