Abstract
We have performed structural parameter optimizations of asymmetric ZnSe∕Zn1−xMnxSe multilayer structures in magnetic and electric fields to maximize the spin polarization of the electron tunnel current. The optimization procedure was carried out by simulated annealing, with target functions set to obtain the best possible spin-polarization properties within the chosen range of bias voltages. The performance of the optimized structure is predicted to exceed that of the existing spin-diode designs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
