Abstract
We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.
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