Abstract
The optimization of medium voltage hybrid Si IGBT/SiC junction barrier Schottky diode modules is explored. The primary variant in the study is the active device area of the SiC JBS diodes for a fixed Si IGBT area. The optimization is performed through electro-thermal circuit simulations using validated physics-based device models. Parameters tracked include device switching losses, conduction losses and junction temperature. Finally, reliability issues were considered. SiC JBS diodes were subject to surge conditions and diode surge current was evaluated during module optimization.
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