Optimization of Semiconductor-Based SRR Metamaterials as Sensors

Abstract

The development of hybrid sensor media is needed to achieve more efficient, sensitive, and accurate performance. Efforts to modify the structure of conventional metamaterials are carried out by integrating semiconductor materials which aim to improve the characteristics of optical properties, electrical properties, and sensitivity as sensors. This study aims to analyze and investigate changes in the optical properties of semiconductor-based metamaterials. The research was conducted through simulation and numerical methods to design and characterize the SRR metamaterial geometry, with a modified Nicolson-Ross-Weir approach, especially the optical parameters of refractive index. The single-cell square pattern SRR metamaterial geometry with a ring radius of 2.2 – 2.8 mm on quartz glass substrate designed at a smaller wavelength based on a maximum frequency source of 9 GHz. The square SRR metamaterial is integrated with several semiconductor materials such as silicon (Si), gallium arsenide (GaAs), and aluminum nitride (AlN). Changes in radius size cause a redshift with respect to radius enlargement. The increasing ring radius of SRR causes a higher resonance depth of the refractive index. Combining hybrid semiconductors with metamaterial results in more negative metamaterial properties as the refractive index becomes larger and negative. The addition of semiconductor material to the metamaterial substrate causes a negative refractive index to shift to a lower frequency.