Abstract
A theoretical analysis for the optimization of the selective-erasure process in holographic photorefractive memories is presented. It is based on the solution of the standard material equations under a linear approximation (low modulation depths). Specific expressions for the optimum phase shifts and erasure rates are obtained. The approach includes all transport processes and so applies to photovoltaic materials such as LiNbO3. The different behavior with regard to nonphotovoltaic materials is discussed. Some additional strategies to improve the overall erasure process are proposed.
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