Optimization of post-CMP cleaning process for elimination of CMP slurry-induced metallic contaminations

Abstract

We have invetigated the slurry-induced metallic contaminations of undoped and doped silicate oxide surface during the post-chemical mechanical polishing (CMP) cleaning process. The metallic contaminations by CMP slurry were evaluated in the four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass (PE-TEOS), O3-boro-phospho-silicate glass (O3-BPSG), PE-BPSG, and phospho-silicate glass (PSG). Prior to entering the post-CMP cleaner, all films were polished with KOH-based slurry. The total X-ray fluorescence (TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing, which is due to the CMP slurry. The polished O3 BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS film because of a mobile ion gettering ability of phosphorus. For PSG oxides, the slurry-induced mobile ion contamination increased with an increase of phosphorus content. In addition, the polishing removal rate of PSG oxides had a linear relationship with phosphorus content.