Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

S Li,D Guérin,S Lenfant,K Lmimouni

doi:10.1063/1.5010403

Abstract

Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

Highlights

Nonvolatile organic memories have been extensively studied and considered as the candidate of next-generation flash memories because of the advanced advantages, such as flexibility, lowcost fabrication, and large areas.[1,2,3,4,5,6] Among the many possible device configurations of organic memories, tremendous efforts have been devoted to the development of nano-floating gate memory (NFGM) towards high performance memory devices, due to its spatially discrete floating-gate elements effectively as a charge trapping site between two dielectrics to store and erase the information.[7]
We present the pentacene based double NFGM with/without PFBT self-assembled monolayers (SAM) modification by using Au NPs and reduced graphene oxide (rGO) sheets as charge trapping layers
The configuration of pentacene based double NFGM device with PFBT SAM modification surfaces is shown in figure 1(a)

Summary

Introduction

Nonvolatile organic memories have been extensively studied and considered as the candidate of next-generation flash memories because of the advanced advantages, such as flexibility, lowcost fabrication, and large areas.[1,2,3,4,5,6] Among the many possible device configurations of organic memories, tremendous efforts have been devoted to the development of nano-floating gate memory (NFGM) towards high performance memory devices, due to its spatially discrete floating-gate elements effectively as a charge trapping site between two dielectrics to store and erase the information.[7]. We present the pentacene based double NFGM with/without PFBT SAM modification by using Au NPs and rGO sheets as charge trapping layers.

Results

Conclusion