Abstract

The Nb-doped TiO2 (NTO) thin films were successfully deposited on glass substrate by TiO2 composite and Nb metal target using RF and DC magnetron sputtering technique by varying the O2 flow rate from 2-10sccm. The effects of electrical, optical and structural properties of NTO thin film were studied. The resistivity of the sample increased from 129.4 to 452.9 Ω.cm with increasing O2 flow-rate from 2 to 10 sccm. The films exhibited a high transparency of over 66.5%–86.8% in the visible region. The lowest band gap energy of 3.10eV is obtained at an O2 flow-rate of 5 sccm.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.