Abstract
In this paper, a subtractive method is proposed for the optimization of NiCr thin film resistor (TFR) in steady of a method of depositing the bottom metal layer from the semi-additive method. The variations of the maximum sheet resistances in the optimized NiCr TFR are within 2.88% and the 3-sigma variation is around 0.87%, which are much higher accurate than the previous fabricated TFRs demonstrated in the lately published papers. The proposed manufacturing process is an optimal solution for manufacturing the NiCr TFRs in the advanced integrated passive devices (IPDs) process on the semi-insulating-GaAs substrate that require stringent size and volumetric efficiency.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
