Abstract
Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n–i–p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layers on the μc-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem solar cells has been significantly improved.
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