Abstract
Abstract We discuss the growth of In x Ga 1− x P quantum dots on nominally (1 0 0)-oriented GaP substrates by low-pressure metal organic vapor phase epitaxy. Parameters like the growth temperature, thickness of the InGaP layer, strain, via the indium composition of In x Ga 1− x P, and the post-growth ripening time have been varied to study their effect on the growth of self-assembled InGaP quantum dots in Stranski–Krastanow mode. Under optimized conditions quantum dots with lateral dimension ∼50 nm and height ∼5 nm and a density >10 10 cm 2 have been achieved. Surface photovoltage spectroscopy is shown to be a convenient and sensitive technique to monitor the various stages in the growth of quantum dot structures.
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