Abstract
In this paper we introduce an approach to decrease dimensions of operational amplifier based on field-effect heterotransistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the heterostruc-ture by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
Highlights
In the present time density of elements of integrated circuits and their performance intensively increasing
Curve 1 is the dependence of dimensionless optimal annealing time on the relation a/L and ξ = γ = 0 for equal to each other values of dopant diffusion coefficient in all parts of heterostructure
Curve 3 is the dependence of dimensionless optimal annealing time on value of parameter ξ for a/L =1/2 and ε = γ = 0
Summary
In the present time density of elements of integrated circuits and their performance intensively increasing. One way to decrease dimensions of these elements of these integrated circuit is manufacturing of these elements in thin-film heterostructures [1,2,3,4]. An alternative approach to decrease dimensions of the elements of integrated circuits is using laser and microwave types annealing [5,6,7]. Using these types of annealing leads to generation inhomogeneous distribution of temperature. That the considered element has been manufactured in heterostructure from Fig. 1. In this paper we analyzed redistribution of dopant during annealing of dopant and/ or radiation defects to formulate conditions for decreasing of dimensions of the considered amplifier
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