Abstract
We achieve well-controlled and reproducible growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of low density InP/GaInP quantum dots optimized for single-dot physics and applications. We overcome the common occurrence of multi-modal distributions of quantum dot sizes by optimizing the growth on (100) GaAs substrates with a 3° misorientation towards ⟨111⟩. In contrast to other epitaxial techniques for quantum dot growth, very controllable dependence of the quantum dot sizes and densities on the nominal thickness of the InP layer is observed, enabling highly reproducible growth.
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