Abstract
Stiction is a major failure mode in microelectromechanical system (MEMS) devices. Recently, a technique was proposed for recovering stiction-failed microstructures using ultrashort-pluse laser irradiation. In the recovery process the extremely high carrier temperatures due to the laser irradiation appear to be a key factor. In order to optimize the process therefore the carrier temperatures in silicon microstructures must be evaluated and their dependence on laser parameters examined. A set of phenomenological governing equations for the carrier and lattice temperatures is numerically solved. The results suggest that a certain combination of laser parameters appears to be optimal for recovering 2 mu m thick silicon microstructures that failed due to stiction.
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