Abstract

Antimony sulfide selenide thin film solar cells have drawn great interest in the field of photovoltaic due to their advantages of simple preparation method, abundant raw materials, non-toxic and stable photoelectric properties. After the development in recent years, the photoelectric conversion efficiency of antimony sulfide selenide solar cells has exceeded 10%, which has great development potential. In this work, the carrier recombination near n/i interface in antimony sulfide selenide solar cells is studied. It is found that the characteristics of the n/i interface are affected by the interfacial electron mobility and energy band structure. The improvement of the interface electron mobility can make the electrons more effectively transferred to the electron transport layer, and realize the effective improvement of the short circuit current density and fill factor of the device. Moreover, the introduction of ZnO/Zn<sub>1–<i>x</i></sub>Mg<sub><i>x</i></sub>O double electron transport layer structure can further optimize the performance of antimony sulfide selenide solar cells. The change of Zn<sub>1–<i>x</i></sub>Mg<sub><i>x</i></sub>O energy level position can adjust the energy level distribution of the interface and light absorption layer simultaneously. When the conduction band energy level of Zn<sub>1–<i>x</i></sub>Mg<sub><i>x</i></sub>O is –4.2 eV and the corresponding Mg content is 20%, the effect of restraining the carrier recombination is the most obvious, and the antimony sulfide selenide solar cell also obtains the best device performance. Finally, under the ideal condition of removing the defect state, the antimony sulfide selenide solar cells with 600 nm in thickness can achieve 20.77% theoretical photoelectric conversion efficiency. The research results provide theoretical and technical support for further optimizing and developing the antimony sulfide selenide solar cells.

Highlights

  • i interface in antimony sulfide selenide solar cells is studied

  • It is found that the characteristics of the n

  • i interface are affected by the interfacial electron mobility and energy band structure

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Summary

Introduction

硒化锑薄膜太阳电池的模拟与结构优化研究 Simulation and optimal design of antimony selenide thin film solar cells 物理学报. 高效硫硒化锑薄膜太阳电池中的渐变能隙结构 Bandgap grading of Sb2(S,Se)3 for high-efficiency thin-film solar cells 物理学报. 钙钛矿太阳电池中的缓冲层研究进展 Progress in perovskite solar cells based on different buffer layer materials 物理学报. 硅异质结太阳电池中钝化层和发射层的优化设计 Design and optimization of passivation layers and emitter layers in silicon heterojunction solar cells 物理学报. 铜铟镓硒薄膜太阳电 池 [4,5] 和碲化镉薄膜太阳电池 [6] 的转换效率 (PCE)

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