Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source

Abstract

In InP microchannel epitaxy (MCE) by liquid-phase epitaxy (LPE), a Sn+In solution is used to grow a layer with n-type doping. The high solubility of P in Sn gives high interface supersaturation ( σ i ), which results in a low MCE width to thickness ratio (W/T ratio). To decrease σ i and to obtain a wide MCE layer, an InP upper source was employed. By changing the size of the upper source, the growth condition was optimized and wide dislocation-free n-type InP MCE layers, whose widths were as large as 250 μm, have been obtained on Si substrates. An InP-based MQW structure was grown on an MCE layer on an Si substrate by MOCVD. Photoluminescence measurements of the structure revealed that the optical quality was as excellent as that of the structures grown directly on InP substrates.