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Abstract
We have investigated the dry etching of Al0.12GaAs/Al0.9GaAs Distributed Bragg Reflectors (DBRs) using photoresist mask in Inductively Coupled Plasma system with Cl2/BCl3/Ar chemistry. Resultant etch rate/etch profiles are studied as a function of ICP process parameters and photoresist mask sidewall profile. The vertical and inclined sidewalls were obtained via controlling mixing gas proportion. Enhancing physical effect in etching, photoresist mask patterns could transfer to etched substrate. In the end, controllable sidewall profile, smooth etch surface and repeatable process of Al0.12GaAs/Al0.9GaAs DBRs etching were achieved.
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