Abstract
High-luminance, efficient quantum-dot light-emitting diodes (QLEDs) have been achieved by optimizing the balance between the hole injection layer (HIL) and the hole transport layer (HTL). Different concentrations of vanadium oxide (V2O5) and poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(4-sec-butylphenyl)diphenylamine)] (TFB) solutions were used to form the efficient HIL and HTL, respectively, for the QLEDs. The hole injection and transport behavior was characterized by using hole-only devices (HODs). The QLEDs, which were prepared with 0.5 wt.% of V2O5 and 0.1 wt.% of TFB as HIL and HTL, respectively, showed a maximum current efficiency of 2.27 cd·A−1 and a maximum luminance of 71,260 cd·m−2. Moreover, the turn-on voltage of the device was as low as 2.2 V due to the efficient carrier injection and transport. The results provide useful information for fabricating high-performance QLEDs.
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