Abstract
High-voltage (≥100 V) power diodes fabricated on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride are generally rated for punch-through leakage current and employ a buffer layer sandwiched between the drift region and substrate. A simple and accurate method for the extraction of important diode design parameters is presented and validated using extensive static current-voltage and capacitance-voltage measurements of high-voltage (≥600 V) commercial SiC junction-barrier-controlled Schottky diodes from room temperature to 250 °C. It is shown that there is significant potential for further optimization of the performance of SiC power diodes.
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