Abstract
By high-accuracy in situ curvature measurement during the growth of InGaAs/GaAsP superlattice structures by metal organic vapor phase epitaxy, we have successfully observed the effect of thin GaAs insertion layers between InGaAs wells and GaAsP barriers on strain control. By analyzing curvature transients, we found that an inadequate gas-switching sequence induces the carry over of indium from the InGaAs layer to the overlying GaAs insertion layer. The resulting carry-over layer has an estimated thickness of 0.6 nm and adversely affects the average strain of the structure. Through consideration of the kinetics of surface atoms, it has been revealed that an optimized gas-switching sequence with a 1 s hydrogen purge after the growth of InGaAs wells is effective for preventing the carry over.
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