Optimization of GaAs semiconductor saturable absorber Q-switched lasers

Abstract

The expressions of pulse characteristics such as output energy, peak power, and pulse width are obtained by solving the coupled rate equations describing the operation of GaAs semiconductor saturable absorber Q-switched lasers. The key parameters of an optimally coupled GaAs saturable absorber Q-switched laser are determined and several design curves are generated from these expressions for the first time. These key parameters include the optimal normalized coupling parameters and the optimal normalized saturable absorber parameters that maximize the output energy or maximize the peak power, and the corresponding normalized energy, normalized peak power, and normalized pulse width. Using the expressions and design curves, one can predict the pulse characteristics and perform the design of an optimally coupled GaAs saturable absorber Q-switched laser.