Abstract
This article improves the breakdown voltage of Ga2O3 SBD with finite implanted edge termination through simulation. The influence of implanted acceptor concentration, implanted depth and implanted length on the breakdown voltage of SBD is investigated. The breakdown voltage (BV) can be increased to 2500 V when the implanted concentration is 5 × 1017 cm−3 and implanted depth is 0.5 μm, more than 5 times than that of regular Ga2O3 SBD. However, the breakdown voltage reduces to below 1000 V when the implanted concentration is higher than 1 × 1018 cm−3. An extra trench isolation structure combined with finite implanted edge termination can improve this phenomenon. The breakdown voltage at high implanted concentration can be stabilized above 1500 V.
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