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Abstract
CZTS (copper-zinc-tin-sulfur) has recently emerged as a capable material for next-generation solar devices due to its abundance and lack of toxicity. In this study, we numerically assess the photovoltaic performance of CZTS solar cells integrated with a Back-Surface Field (BSF) layer, which is a novel approach to enhancing solar cell efficiency. We investigate the impact of various parameters, such as temperature, CZTS layer thickness, acceptor doping concentration, metal work function, and series and shunt resistances, on the electrical properties of the sc. We assess the proposed device structure's performance using ideal values for the absorber layer thickness, buffer layer thickness, and doping concentration with silicon as the BSF(Back-Surface Field) layer. By optimizing the parameters in each layer, we achieve an efficiency of 20.83 %, which is higher than previous reports in the literature. These results provide a foundation for researchers to fabricate highly efficient CZTS solar cell in the future. In summary, our findings demonstrate the potential of CZTS solar cell with a BSF layer to significantly enhance the efficiency of solar devices, and pave the way for further exploration of this technology.
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