Abstract
In this paper we present numerical optimization results for a 70 μm-wide punch-through insulated-gate bipolar-transistors (IGBTs). The optimization method is based on the adjoint space technique that our group has developed for the design of nanoscale semiconductor devices and which is adjusted here to compute the doping sensitivity function of the breakdown voltage. The doping sensitivity function of the breakdown voltage shows how sensitive the breakdown voltage is when one additional acceptor impurity is added at a particular location inside the semiconductor device. Since this function provides information about the gradient of the breakdown voltage with respect to the doping concentration, it is instrumental for the numerical and practical optimization of IGBTs. By using an optimization method based on steepest descends, we are able to increase the breakdown voltage of the IGBT considered in this study from approximately 300 V to over 700 V without deteriorating the on-state resistance of the transistor significantly.
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