Abstract
A new pretreatment method for metallization was developed using on inductive coupled plasma (ICP) soft etch with Ar. The ICP soft etch, which is used instead of conventional HF pretreatment, is anisotropic etching with high-density plasma and low incident energy, and can uniformly remove native oxide at the bottom of fine contact holes. As a result, excellent ohmic characteristics, low junction leakage current and superior reliability of thin gate oxide can be achieved using the ICP soft etch with optimized low bias voltage. Furthermore, the mechanism for the formation of stable ohmic contacts was theoretically analyzed using a Monte Carlo topological simulation. This simulation was especially useful in that it helped to yield an understanding of the mechanism controlling removal of the native oxide in anisotropic etching. Using an ICP soft etch with low sputtering yield, it is possible to prevent resputter deposition on the bottom of holes with 0.1 µm diameter.
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