Abstract
The Vortex Flow Transistor (VFT) has been proposed as a superconducting amplifying device. Useful circuits at microwave frequencies may be achievable using distributed amplifier concepts. However, realization of these circuits depends on obtaining a circuit model for this device and then characterizing and optimizing the elements that make up this model. In order to study these elements, a group of devices with various geometric differences were fabricated with Nb-Pb technology. Initial results of a study of the low and high frequency properties of the transresistance, output resistance, feedthrough capacitance, and input inductance of the VFT are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
