Abstract
High-k films of CaCu3Ti4O12 are of interest for industrial multifunctional electronics. For oriented flow High Vacuum CVD processes, precursors are needed that they can be safely transported in the gas phase without carrier gas. We investigated the vapor pressure, and transport rate and temporal stability of a potential Ca precursor [Ca(hfa)2tgte] (hfa: hexafluoroacetylacetonate, tgte: tetraethylene glycol dimethyl ether) under HV conditions by varying the evaporation temperature. At 115{degree sign}C, the transport rate for the Ca(hfa)2tgte precursor of 4.3 mmol per hour was achieved allowing for high film deposition rates.
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