Optimization of Bosch etch process for vertically stacked Si nanowires

Abstract

A top-down process implementation method to fabricate multiple vertically stacked single-crystal silicon nanowires (SiNWs) has been presented in the paper. The etching and passivation deposition processes, critical to the final structural profile, are investigated in detail by varying processing time and applied power, so as to obtain the optimized processing parameters for the formation of stable and reproducible SiNW stacked structure.