Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination

Abstract

Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In0.12Ga0.88N MQWs with In x Ga1−x N (x = 0 ÷ 0.06) and Al0.065Ga0.935N barriers. Only for the InGaN barriers the transport is efficient. However, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley–Read–Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.