Abstract
The objective of this work is to reduce the front surface reflectivity of the GaAs solar cell by depositing AR-coating of appropriate thickness and refractive index material. We use MgO and ZnO film and optimize their thickness for minimum reflectivity. Results indicate that the reflectivity is reduced up to 4% for MgO film and 2% for ZnO film at solar spectrum wavelength range from 550 nm to 650 nm. The external efficiency of GaAs solar cell with AR-coating is increased by 31.53% and 33.09% for MgO and ZnO film respectively.
Highlights
The performance of photovoltaic solar cell is determined in terms of Internal Quantum Efficiency (IQE) and external efficiency
The modern technology of thin film device fabrication is capable of fabricating good quality solar cell with greater than 80% internal quantum efficiency
The reported maximum value of external efficiency for Si solar cell is about 25%1 and for GaAs solar cell is about 38%2
Summary
The performance of photovoltaic solar cell is determined in terms of Internal Quantum Efficiency (IQE) and external efficiency. The difference between these two efficiencies is quite large even for good quality solar cells. The modern technology of thin film device fabrication is capable of fabricating good quality solar cell with greater than 80% internal quantum efficiency. The reported maximum value of external efficiency for Si solar cell is about 25%1 and for GaAs solar cell is about 38%2. This large difference between IQE and external efficiency is due to the poor light entering capacity of the solar cell structure.
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