Abstract
Recombination radiation from Landau states in impact ionized n-InSb provides a magnetically tunable far i.r. source. Investigations in order to optimize the emission intensity and linewidth are performed. The radiation is studied in dependence of the electric and magnetic field the total impurity concentration and the sample geometry. Donor spectroscopy on high purity n-GaAs is demonstrated with a resolution of 3 cm −1.
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