Abstract

An inverted micro-strip line (IML) is proposed at microwave and millimeter wave frequencies. This IML on high resistivity silicon (HRS) is studied from 10 to 100GHz and presents an attenuation lower than 0.08dB/mm on the whole frequency band. A parametric study, in order to minimize the attenuation and the dispersion of the inverted line in the 10{100GHz bandwidth, is performed using numerical full wave calculations with HFSS (High Frequency Structural Simulator) tool. A complementary study is added: a large variety of characteristic impedances (for instance, from 38› to 87› at 60GHz) is performed, the change of propagation modes is observed and the qualiflcation and quantiflcation of the losses allows minimizing them. A comparison with a line of the same length and width without ground plane, the Planar Goubau Line (PGL) is reported in the 10{100GHz band and a flrst measure of the PGL is performed, in the 55{67GHz band, presenting the same propagation mode as the IML at 60GHz. The measured attenuation of 0.064dB/mm in the 55{67GHz obtained for the PGL promises a comparable value for the IML in the measured band.

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