Abstract
We report on sub-0.1 µm electron-beam (EB) lithography using a new chemically amplified positive resist with a stabilizing additive. Diphenylamine (DPA) was incorporated into the resist formulation as a stabilizing additive. DPA improves the post-exposure delay (PED) stability. Even after a PED of 60 min in a clean-room atmosphere (NH3 concentration ∼20 ppb), no insoluble surface layer was observed for the resist with DPA. High sensitivity and resolution could be achieved by optimizing process conditions such as baking and developer. 0.1 µm lines-and-spaces (L/S) patterns and 0.08 µm hole patterns were obtained using a 50 kV variably shaped beam EB system. The practical sensitivity was 6 µC/cm2 for L/S patterns. Our resist system also shows good performance as an etching mask. A 0.1 µm diameter hole which was 0.5 µm etched in silicon oxide using a 0.5 µm thick resist could be obtained in this experiment.
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