Abstract
The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled. This proposed modeling by the finite element method using the Comsol multiphysics software, allowed to study the multiphysics behaviour of the transistor and to observe the different degradations in the structure of the component. Then, an optimization study is necessary to avoid failures in the transistor. In this work, we have used the Covariance Matrix Adaptation-Evolution Strategy (CMA-ES) method to solve the optimization problem, but it requires a very important computing time. Therefore, we proposed the kriging assisted CMA-ES method (KA-CMA-ES), it is an integration of the kriging metamodel in the CMA-ES method, it allows us to solve the problem of optimization and overcome the constraint of calculation time. All these methods are well detailed in this paper. The coupling of the finite element model developed on Comsol Multiphysics and the KA-CMA-ES method on Matlab software, allowed to optimize the multiphysics behaviour of the transistors. We made a comparison between the results of the numerical simulations of the initial state and the optimal state of the component. It was found that the proposed KA-CMA-ES method is efficient in solving optimization problems.
Highlights
The transistor is a very important electronic component in mechatronic systems, it ensures several functions such as control and signal amplification
high electron mobility transistor (HEMT) has been used in several systems such as high power amplifiers, radars and satellites, it is found in radio frequency sensors and devices [7]
Comsol multiphysics software is based on the finite element method, it allows to reconstruct the system geometrically, to apply loads and boundary conditions and par to solve all equations related to the developed modeling (Figure 2)
Summary
The transistor is a very important electronic component in mechatronic systems, it ensures several functions such as control and signal amplification. Gallium nitride (GaN) is characterized by high mobility, a very high electric breakdown field and high thermal conductivity which is a great advantage compared to other types of transistor [1,2] Thanks to these and other characteristics, these transistors are used in several highfrequency and high-temperature applications [3,4], such as, telecommunication, electronic warfare (military field) and airborne systems [5,6], etc. The operating temperature is a very important factor that can influence the HEMT reliability, because most of its characteristics such as electron mobility,. Function, the objective function to be minimized depends on the failure mode This method has shown its efficiency through results obtained in several works which aim at the reliability of systems [18]. We will present the extracted results and compare the variation of the objective function before and after the optimization
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