Abstract
We propose and simulate electrostatically-defined silicon double quantum dot device with single-layered gates. The device can be easily fabricated and has flexible controllability of quantum dot and tunnel junctions. Numerical simulations on electron distribution as well as potential profile of the device are presented. From the simulated potential profile of the device, we extract parameters required for a double quantum dot transport simulation, such as potential barrier width and height. Estimation of quantum dot size, electron number and tunnel resistance at low temperature is also discussed.
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