Optimization and analysis of NF3 in situ chamber cleaning plasmas

Abstract

We report on the optimization and analysis of a dilute NF3 in situ plasma-enhanced chemical vapor deposition chamber cleaning plasma for an Applied Materials P-5000 DxL chamber. Using design of experiments methodology, we identified and optimized operating conditions within the following process space: 10–15 mol % NF3 diluted with helium, 200–400 sccm NF3 flow rate, 2.5–3.5 Torr chamber pressure, and 950 W rf power. Optical emission spectroscopy and Fourier transform infrared spectroscopy were used to endpoint the cleaning processes and to quantify plasma effluent emissions, respectively. The results demonstrate that dilute NF3-based in situ chamber cleaning can be a viable alternative to perfluorocarbon-based in situ cleans with added benefits. The relationship between chamber clean time and fluorine atom density in the plasma is also investigated.