Abstract
Abstract The realisation of effective UV photodetectors from thin-film diamond requires the selection of good-quality substrate material and careful device design. However, these alone are insufficient to yield high-performance characteristics: post-growth treatments are required to modify the optoelectronic properties of the diamond. Photoconductive devices fabricated in this way can be truly blind to visible light, fast and offer high levels of photoconductive gain. The origin of these improvements has been studied using thermally stimulated current (TSC) and photoconductivity measurements. The treatments used appear to provoke extremely high carrier lifetimes, encouraging high gain whilst eradicating extrinsic photoconduction. TSC reveals that a new trap state is introduced at (Ea≈0.6 eV). A model to explain the changes in device characteristics is discussed.
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