Abstract
We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 Ω mm (7.3×10 −7 Ω cm 2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.
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