Optimisation of SU-8 processing parameters for deep X-ray lithography

Abstract

The negative photoresist SU-8 has been recognised as an unique resist, equally useful for conventional UV lithography as well as deep X-ray lithography (DXRL) applications [2, 7, 12, 17, 18]. One of the major limitations in the use of SU-8 in lithographic processes is the occurrence of internal stress [15]. The processing parameters investigated for DXRL of SU-8 included resist thickness (450–850 μm), soft bake time (7–11 h), exposure dose (30–70 J/cm3), post exposure bake time (20, 40, 60 min) and development time. The effect of these parameters on stress was evaluated using wafer curvature measurements. Taguchi optimisation techniques have been used to asses the contribution of these parameters on the stress of the developed structures. This study shows that softbake time contributes the most to stress in the SU-8 film at 50%, followed by the exposure dose and post exposure bake with 30% and 15% respectively. Stress varied somewhat linearly with thickness. At higher thickness, the deposition process needs to be changed for very high aspect ratio structures. The main objective of this work has been to optimise the processing conditions of thick SU-8 films for DXRL.