Year-end Sale % OFF 
Abstract
Bistable quantum-well infrared phototransistors (BQWIPs) utilising intersubband electron phototransitions and resonant-tunnelling injection are considered. The mechanisms of the bistability effect are discussed. An analytical model of the BQWIP operation is proposed and used to derive its characteristics. To optimise the BQWIP performance the parameters of the hysteresis loops in the BQWIP characteristics are obtained as functions of its physical parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
