Optimisation of 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates

Abstract

We present a study of 1.3-μm InAs/GaAs quantum dot lasers monolithically grown on Si substrates by molecular beam epitaxy. We focused on the optimization of III-V buffer layers epitaxy grown on Si substrates, which includes the nucleation layers and the dislocation filter layers. The effect of growth temperature of GaAs nucleation layer has been investigated. Additionally, InAlAs/GaAs and In GaAs/GaAs strained layer superlattices(SLSs) are compared as dislocation filter layers. Our results show the optimization of III-V buffer layers grown on Si is critical to achieve high performance quantum-dot lasers. An optimised 1.3-μm board-area laser has been demonstrated with a low threshold current density of 194 A/cm2 and output power of 77 mW at room temperature.