Abstract
ABSTRACT C-axis oriented AlN thin films have been deposited by reactive sputtering at room temperature. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on fused silica as well as on single crystal silicon substrates, have been examined. Aluminum nitride thin films were deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the Full Width at Half Maximum (FWHM) of the rocking curve of the AlN (0002) peak. The relationship between the deposition conditions and the crystallographic orientation of the films is discussed and a guide is given on how to optimize these conditions to obtain highly c-axis oriented AlN thin films without substrate heating.
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