Abstract
0.25 /spl mu/m GaAs MESFETs are shown to be excellent device candidates for low current, low noise receiver circuits in personal communicators. The measured low current performance of ion-implanted 0.25 /spl mu/m gate FETs is reported for device gate widths of 100 /spl mu/m and 200 /spl mu/m and device bias conditions 0.5 V >
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