Optimal Magnetic Graphite Heater Design for Impurity Control in Single-Crystal Si Grower Using Crystal Growth Simulation

Hye Jun Jeon,Woo Kyoung Kim,Salh Alhammadi,Jae Hak Jung,Hyeonwook Park

doi:10.3390/pr10010070

Abstract

In this paper, we report a successfully modified single-crystal Si growth furnace for impurity control. Four types of arbitrary magnetic heater (AMGH) systems with 3, 4, 5, and poly parts were designed in a coil shape and analyzed using crystal growth simulation. The concentration of oxygen impurities in single-crystal Si ingots was compared among the designed AMGHs and a normal graphite heater (NGH). The designed AMGHs were confirmed to be able to control turbulence and convection in a molten state, which created a vortex that influenced the oxygen direction near the melt–crystal interface. It was confirmed that replacing NGH with AMGHs resulted in a reduction in the average oxygen concentration at the Si melt–crystal interface by approximately 4.8%.

Highlights

Design for Impurity Control inThe majority of single-crystal Si ingots currently used in semiconductor devices and solar cells are fabricated by the Czochralski (Cz) method [1]
This study,Sia ingot simulation wascooling performed to reduce the concentration of oxygen, As theIn single-crystal has a high rate after crystal growth, it does not have an equilibrium condition oxygen introduced the crystal and exists a representative impuritywith in the Theinto optimal structure inside the in reactor wa supersaturated state
The optimal structure inside the reactor was designed to overcome the limited conditions in a given process related to impurity control

Summary

Introduction

Design for Impurity Control inThe majority of single-crystal Si ingots currently used in semiconductor devices and solar cells are fabricated by the Czochralski (Cz) method [1]. In the Cz process, singlecrystal ingot growth is initiated by establishing contact between a single-crystal Si seed and a molten Si in a rotating quartz crucible, and further growth is achieved by slowly pulling the ingot from the Si melt, with rotation in the opposite direction to the crucible [2,3,4,5,6]. Optimization of the Cz process and optimal design of a Cz reactor for low-cost and highquality ingot and wafer production has been pursued to maintain competitiveness in the industry. We designed a new graphite heater to produce high-quality single-crystal ingots in a low-cost and stable manner by realizing the internal magnetic field from the graphite heater itself. Internal side graphite heaters are typically divided into three or multiple blocks for industrial applications as the implementation of a single block is not feasible because of the high load

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Conclusion