OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS

Abstract

We consider optimal design problems for semiconductor devices which are simulated using the energy transport model. We develop a descent algorithm based on the adjoint calculus and present numerical results for a ballistic diode. Furthermore, we compare the optimal doping profile with results computed based on the drift diffusion model. Finally, we exploit the model hierarchy and test the space mapping approach, especially the aggressive space mapping algorithm, for the design problem. This yields a significant reduction of numerical costs and programming effort.