Abstract

In this paper, we employed a quadruple-layer antireflection coating structure with Al2O3 deposited by DC reactive magnetron sputtering and SiO2 deposited by PECVD (plasma enhanced chemical vapor) deposition as the bottom layer, and proposed an optical optimization program for quadruple-layer antireflection coatings to obtain the structure parameters. In the experiment, two types of optimization quadruple-layer antireflection coatings and typical SiNx:H double-layer antireflection coatings were deposited on the crystalline silicon solar cells. The reflectance of the silicon solar cell with quadruple-layer antireflection coatings was lower than that of the solar cell with SiNx:H double-layer antireflection coatings. These results demonstrated the possibility of substituting quadruple-layer antireflection coatings for double-layer antireflection coatings, as well as the feasibility of the application in photovoltaic.

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