Abstract
Transient enhanced diffusion of boron inhibits the formation of ultrashallow junctions needed in the next-generation of microelectronic devices. Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. The focus of this study is to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet resistance. Comparison of different parameterizations of the optimal trajectories shows that linear profiles gave the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control implementations for these processes
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
